收藏本站
Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
I SM
Maximum Continuous Source Current
Maximum Pulse Source Current (Note 2)
0.6
6
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 1.6 A
0.8
1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
P D ( t ) =
T J ? T A
R θ J A ( t )
=
T J ? T A
R θ J C + R θ CA ( t )
= I 2 D ( t ) × R DS ( ON )
T J
Typical R θ JA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250 o C/W when mounted on a 0.02 in 2 pad of 2oz cpper.
b. 270 o C/W when mounted on a 0.001 in 2 pad of 2oz cpper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS355N Rev. D1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NDS7002A MOSFET N-CH 60V 280MA SOT-23
NDS8425 MOSFET N-CH 20V 7.4A 8SOIC
NDS8434 MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
NDS9948 MOSFET 2P-CH 60V 2.3A 8-SOIC
相关代理商/技术参数
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDS355N_D87Z 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS356AP 功能描述:MOSFET P-Channel Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS356AP_L99Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356AP_NB8L005A 制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET P-CH 30V 1.1A 3PIN SUPERSOT - Tape and Reel